TREE NEWS reports: Samsung Electronics will use TSMC’s 3-nanometer process to produce base dies for Nvidia’s next-generation custom HBM chips, marking Samsung’s first collaboration with TSMC at the HBM manufacturing stage. Nvidia has asked Samsung, SK Hynix and Micron Technology to manufacture NVHBM base dies using TSMC’s process and to produce their core chips using sixth-generation DRAM technology.
Samsung to Use TSMC 3nm Process for Nvidia’s Next-Gen HBM Base Dies
The notable wrinkle here is competitive logic: Samsung is turning to a foundry rival to build a component for a memory customer, which suggests Nvidia is standardizing the base-die layer around TSMC's process rather than letting each memory maker use its own. That shifts leverage toward TSMC at the HBM interface even as Samsung, SK Hynix and Micron compete on core DRAM. It also implies Nvidia wants a uniform base-die baseline across suppliers. Whether Samsung's own foundry ambitions complicate this arrangement, and whether the three memory makers converge on the same TSMC-based design, is the open question.
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