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Qingyi Optoelectronics unit to invest up to 1.5B yuan in high-end photomask plant

Qingyi Optoelectronics’ subsidiary Foshan Qingyi Microelectronics plans to invest up to 1.5 billion yuan to build a third-phase high-end semiconductor photomask production base in Nanhai District, Foshan. The facility will produce photomasks for 28nm-14nm process nodes, with construction scheduled to start in December 2026 and a 36-month build period. Funding will come from the subsidiary’s own or self-raised capital, not from proceeds of a share offering.

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AI take

The significance here lies less in the headline figure than in the funding route: a self-funded, non-equity commitment of this scale signals that domestic photomask capacity for 28nm-14nm nodes is being treated as a strategic build-out rather than a capital-markets story. It matters most to China's semiconductor supply chain, where high-end photomasks remain a concentrated, import-dependent link. The long runway — construction not starting until late 2026, with a 36-month build — means near-term impact is negligible, and whether the self-raised funding materializes on schedule is the open question worth watching.

Generated by AI for reference only.

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