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NetEase Incubated Qianhe Yibang’s 4-Layer 3D DRAM Chip Successfully Lights Up

NetEase-incubated Qianhe Yibang announced the successful activation of the world’s first 4-layer 3D DRAM stacked compute-in-memory chip, a breakthrough in semiconductor technology. The innovation promises significant performance and energy efficiency gains for AI and high-performance computing applications.

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