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Samsung: HBM to reach nearly 30% of DRAM wafer capacity next year

Samsung Electronics executives said high-bandwidth memory (HBM) is expected to account for nearly 30% of the DRAM chipmaker’s total wafer capacity next year, up from about 20% currently. The shift underscores the growing share of capacity being allocated to HBM as demand for AI memory rises.

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AI take

The significance is less the HBM number itself than what it implies for the rest of the DRAM stack: capacity reallocation of this scale is a supply decision, and conventional DRAM is where the squeeze would be felt. It affects anyone buying standard memory, not just AI accelerator vendors. Whether the reallocation continues at this pace, and how competing DRAM makers respond with their own capacity plans, is the open question worth watching.

Generated by AI for reference only.

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