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Navitas Semiconductor Wins US Army Contract for Next-Gen SiC Chips, Shares Jump 22%

Navitas Semiconductor said it has been awarded the ALATTIS project by the U.S. Army Research Laboratory to develop next-generation 10 kV silicon carbide power semiconductor technology for defense applications. The company’s shares rose 22% in after-hours trading. ALATTIS stands for Accelerated Large Area 10 kV SiC IGBT Prototype Project, aimed at domestic manufacturing processes for 10 kV SiC IGBTs and PIN diodes. Contract value, duration and work location were not disclosed.

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AI take

The significance here is less the contract's size — undisclosed — than the validation of SiC as a defense-grade technology and Navitas's positioning beyond its core consumer power business. Defense procurement is slow and sticky, so an Army Research Laboratory award can function as a credibility signal for domestic manufacturing capacity. The open question is whether this becomes a recurring revenue line or remains a development-stage program; without contract value, duration or location, the market's 22% move is pricing a narrative, not disclosed economics.

Generated by AI for reference only.

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