TREE NEWS reports: Samsung Electronics will use its second Taylor, Texas, fab to produce base wafers for high-bandwidth memory chips for AMD and Nvidia, with the plant’s full output already ordered and most of it from AMD. Construction is expected to begin this month at the roughly 2.7 million-square-foot site, which will run an advanced 2-nanometer process. Equipment installation is slated for February 2029, with mass production in 2030.
Samsung to make AMD, Nvidia HBM base wafers at second Texas fab
AI take
The significance lies less in the HBM headline than in the structure of the deal: a single Texas fab's output pre-committed, with AMD taking the bulk, signals HBM base wafers are being contracted years ahead rather than bought on spot terms. That shifts leverage toward whoever secures capacity early, and it ties Samsung's US footprint directly to two of its memory rivals' AI roadmaps. The open question is timing — with equipment installation not slated until 2029 and mass production in 2030, this is a capacity signal for the next cycle, not the current one.
Generated by AI for reference only.
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